BUV70 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV70
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 1300 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TOP3
BUV70 Transistor Equivalent Substitute - Cross-Reference Search
BUV70 Datasheet (PDF)
..1. Size:218K inchange semiconductor
buv70.pdf
buv70.pdf
isc Silicon NPN Power Transistor BUV70DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 600V (Min)(BR)CEOHigh Power DissipationFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor controls, switching mode powersupplies applications.Absolute maximum ratings(Ta=25)SYMBOL PARAME
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
