BUV70 Datasheet and Replacement

   Type Designator: BUV70
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 140 W
   Maximum Collector-Base Voltage |Vcb|: 1300 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TOP3
      - BJT Cross-Reference Search