All Transistors. BUV70 Datasheet

 

BUV70 Datasheet and Replacement


   Type Designator: BUV70
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 140 W
   Maximum Collector-Base Voltage |Vcb|: 1300 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TOP3
 

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BUV70 Datasheet (PDF)

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BUV70

isc Silicon NPN Power Transistor BUV70DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 600V (Min)(BR)CEOHigh Power DissipationFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor controls, switching mode powersupplies applications.Absolute maximum ratings(Ta=25)SYMBOL PARAME

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N6702 | 2S133 | 2SD738A | 2SC2485 | LS350 | 3DA98A | 2N981

Keywords - BUV70 transistor datasheet

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