All Transistors. BUV70 Datasheet

 

BUV70 Datasheet and Replacement


   Type Designator: BUV70
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 140 W
   Maximum Collector-Base Voltage |Vcb|: 1300 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 9 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TOP3
 

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BUV70 Datasheet (PDF)

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BUV70

isc Silicon NPN Power Transistor BUV70DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 600V (Min)(BR)CEOHigh Power DissipationFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor controls, switching mode powersupplies applications.Absolute maximum ratings(Ta=25)SYMBOL PARAME

Datasheet: BUV56A , BUV60 , BUV61 , BUV62 , BUV62A , BUV63 , BUV66 , BUV66A , 2SD718 , BUV70F , BUV71 , BUV71F , BUV74 , BUV74A , BUV82 , BUV83 , BUV89 .

History: 2N6702 | BUW87A | UN6224 | H421

Keywords - BUV70 transistor datasheet

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