BUV70 Specs and Replacement
Type Designator: BUV70
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 1300 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TOP3
BUV70 Substitution
- BJT ⓘ Cross-Reference Search
BUV70 datasheet
isc Silicon NPN Power Transistor BUV70 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 600V (Min) (BR)CEO High Power Dissipation Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor controls, switching mode power supplies applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAME... See More ⇒
Detailed specifications: BUV56A, BUV60, BUV61, BUV62, BUV62A, BUV63, BUV66, BUV66A, BD140, BUV70F, BUV71, BUV71F, BUV74, BUV74A, BUV82, BUV83, BUV89
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