All Transistors. BUV82 Datasheet

 

BUV82 Datasheet and Replacement


   Type Designator: BUV82
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TOP3
 

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BUV82 Datasheet (PDF)

 ..1. Size:220K  inchange semiconductor
 buv82 buv83.pdf pdf_icon

BUV82

isc Silicon NPN Power Transistors BUV82/83DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)-BUV82CEO(SUS)= 450V(Min)-BUV83High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switching regula-tors, motor control systems and switching applications.A

 ..2. Size:102K  inchange semiconductor
 buv82 83.pdf pdf_icon

BUV82

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KRA307 | 2N271 | EFT323 | 2SD2444K | E20180 | 2N5643

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