BUV82 Specs and Replacement

Type Designator: BUV82

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TOP3

 BUV82 Substitution

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BUV82 datasheet

 ..1. Size:220K  inchange semiconductor

 buv82 buv83.pdf pdf_icon

BUV82

isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min)-BUV82 CEO(SUS) = 450V(Min)-BUV83 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. A... See More ⇒

 ..2. Size:102K  inchange semiconductor

 buv82 83.pdf pdf_icon

BUV82

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=... See More ⇒

Detailed specifications: BUV66, BUV66A, BUV70, BUV70F, BUV71, BUV71F, BUV74, BUV74A, 2N3906, BUV83, BUV89, BUV90, BUV90A, BUV90F, BUV93, BUV94, BUV95

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