BUV82 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV82
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TOP3
BUV82 Transistor Equivalent Substitute - Cross-Reference Search
BUV82 Datasheet (PDF)
buv82 buv83.pdf
isc Silicon NPN Power Transistors BUV82/83DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)-BUV82CEO(SUS)= 450V(Min)-BUV83High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switching regula-tors, motor control systems and switching applications.A
buv82 83.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=
Datasheet: BUV66 , BUV66A , BUV70 , BUV70F , BUV71 , BUV71F , BUV74 , BUV74A , A733 , BUV83 , BUV89 , BUV90 , BUV90A , BUV90F , BUV93 , BUV94 , BUV95 .
