BUV89 Specs and Replacement

Type Designator: BUV89

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 2.5

Noise Figure, dB: -

Package: TOP3

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BUV89 datasheet

 ..1. Size:214K  inchange semiconductor

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BUV89

isc Silicon NPN Power Transistor BUV89 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in AC motor control systems from three- phase mains. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒

Detailed specifications: BUV70, BUV70F, BUV71, BUV71F, BUV74, BUV74A, BUV82, BUV83, TIP31C, BUV90, BUV90A, BUV90F, BUV93, BUV94, BUV95, BUV98, BUV98A

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