All Transistors. BUV89 Datasheet

 

BUV89 Datasheet and Replacement


   Type Designator: BUV89
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2.5
   Noise Figure, dB: -
   Package: TOP3
 

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BUV89 Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
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BUV89

isc Silicon NPN Power Transistor BUV89DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in AC motor control systems from three-phase mains.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

Datasheet: BUV70 , BUV70F , BUV71 , BUV71F , BUV74 , BUV74A , BUV82 , BUV83 , 100DA025D , BUV90 , BUV90A , BUV90F , BUV93 , BUV94 , BUV95 , BUV98 , BUV98A .

History: JC559 | MMSS8550W-J

Keywords - BUV89 transistor datasheet

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