All Transistors. BUW14 Datasheet

 

BUW14 Datasheet and Replacement


   Type Designator: BUW14
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO126
 

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BUW14 Datasheet (PDF)

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BUW14

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 GENERAL DESCRIPTIONHigh-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emit

Datasheet: BUW132A , BUW132H , BUW133 , BUW133A , BUW133H , BUW13A , BUW13AF , BUW13F , 2N4401 , BUW16 , BUW17 , BUW18 , BUW22 , BUW22A , BUW22AP , BUW22P , BUW23 .

History: 2SC121 | 2SC833

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