BUW14 Specs and Replacement
Type Designator: BUW14
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO126
BUW14 Substitution
- BJT ⓘ Cross-Reference Search
BUW14 datasheet
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emit... See More ⇒
Detailed specifications: BUW132A, BUW132H, BUW133, BUW133A, BUW133H, BUW13A, BUW13AF, BUW13F, 2SB817, BUW16, BUW17, BUW18, BUW22, BUW22A, BUW22AP, BUW22P, BUW23
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