BUW24 Specs and Replacement
Type Designator: BUW24
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
BUW24 Substitution
- BJT ⓘ Cross-Reference Search
BUW24 datasheet
Product Specification www.jmnic.com Silicon Power Transistors BUW24 DESCRIPTION Short switching time High dielectric strength With TO-3 package APPLICATIONS Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VAL... See More ⇒
isc Silicon NPN Power Transistor BUW24 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 350V(Min.) (BR)CEO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V C... See More ⇒
Detailed specifications: BUW16, BUW17, BUW18, BUW22, BUW22A, BUW22AP, BUW22P, BUW23, NJW0281G, BUW25, BUW25-5, BUW26, BUW28, BUW29, BUW32, BUW32A, BUW32AP
Keywords - BUW24 pdf specs
BUW24 cross reference
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History: 2SB404
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