BUW25 Specs and Replacement

Type Designator: BUW25

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 BUW25 Substitution

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BUW25 datasheet

 ..1. Size:205K  inchange semiconductor

 buw25.pdf pdf_icon

BUW25

isc Silicon NPN Power Transistor BUW25 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec... See More ⇒

Detailed specifications: BUW17, BUW18, BUW22, BUW22A, BUW22AP, BUW22P, BUW23, BUW24, D965, BUW25-5, BUW26, BUW28, BUW29, BUW32, BUW32A, BUW32AP, BUW32APFI

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