BUW52I Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW52I
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TOP3
BUW52I Transistor Equivalent Substitute - Cross-Reference Search
BUW52I Datasheet (PDF)
9.1. Size:214K inchange semiconductor
buw52.pdf
buw52.pdf
isc Silicon NPN Power Transistor BUW52DESCRIPTIONHigh Current CapabilityFast Switching SpeedLow Saturation Voltage and High GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifierapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: MP1556A
