BUW52I Specs and Replacement

Type Designator: BUW52I

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TOP3

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BUW52I datasheet

 9.1. Size:214K  inchange semiconductor

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BUW52I

isc Silicon NPN Power Transistor BUW52 DESCRIPTION High Current Capability Fast Switching Speed Low Saturation Voltage and High Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter... See More ⇒

Detailed specifications: BUW44, BUW45, BUW46, BUW48, BUW49, BUW50, BUW51, BUW52, 2N5401, BUW57, BUW58, BUW60, BUW60I, BUW61, BUW61I, BUW62, BUW62I

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