All Transistors. BUW52I Datasheet

 

BUW52I Datasheet and Replacement


   Type Designator: BUW52I
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TOP3
 

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BUW52I Datasheet (PDF)

 9.1. Size:214K  inchange semiconductor
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BUW52I

isc Silicon NPN Power Transistor BUW52DESCRIPTIONHigh Current CapabilityFast Switching SpeedLow Saturation Voltage and High GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifierapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter

Datasheet: BUW44 , BUW45 , BUW46 , BUW48 , BUW49 , BUW50 , BUW51 , BUW52 , TIP41 , BUW57 , BUW58 , BUW60 , BUW60I , BUW61 , BUW61I , BUW62 , BUW62I .

History: CN301

Keywords - BUW52I transistor datasheet

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