All Transistors. BUW57 Datasheet

 

BUW57 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUW57
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

 BUW57 Transistor Equivalent Substitute - Cross-Reference Search

   

BUW57 Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
 buw57.pdf

BUW57 BUW57

isc Silicon NPN Power Transistor BUW57DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.) @I = 18ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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