All Transistors. BUW57 Datasheet

 

BUW57 Datasheet and Replacement


   Type Designator: BUW57
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 400 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BUW57 Datasheet (PDF)

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BUW57

isc Silicon NPN Power Transistor BUW57DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.) @I = 18ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25

Datasheet: BUW45 , BUW46 , BUW48 , BUW49 , BUW50 , BUW51 , BUW52 , BUW52I , C5198 , BUW58 , BUW60 , BUW60I , BUW61 , BUW61I , BUW62 , BUW62I , BUW64A .

History: 2SA414

Keywords - BUW57 transistor datasheet

 BUW57 cross reference
 BUW57 equivalent finder
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