BUW70 Specs and Replacement

Type Designator: BUW70

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO3

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BUW70 datasheet

 ..1. Size:203K  inchange semiconductor

 buw70.pdf pdf_icon

BUW70

isc Silicon NPN Power Transistor BUW70 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 0.8V(Max.) @I = 4A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters. Absolute maximum ratings(Ta... See More ⇒

Detailed specifications: BUW61I, BUW62, BUW62I, BUW64A, BUW64B, BUW64C, BUW66, BUW67, BC557, BUW71, BUW72, BUW73, BUW74, BUW75, BUW76, BUW77, BUW81

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