BUW72 Specs and Replacement
Type Designator: BUW72
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BUW72 Substitution
- BJT ⓘ Cross-Reference Search
BUW72 datasheet
isc Silicon NPN Power Transistor BUW72 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 0.8V(Max.) @I = 4A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in clocked voltage converters. Absolute maximum ratings(Ta... See More ⇒
Detailed specifications: BUW62I, BUW64A, BUW64B, BUW64C, BUW66, BUW67, BUW70, BUW71, 13009, BUW73, BUW74, BUW75, BUW76, BUW77, BUW81, BUW81A, BUW84
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