All Transistors. BUW75 Datasheet

 

BUW75 Datasheet and Replacement


   Type Designator: BUW75
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BUW75 Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
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BUW75

isc Silicon NPN Power Transistor BUW75DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIntended in fast switching applications for high output powers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emi

Datasheet: BUW64C , BUW66 , BUW67 , BUW70 , BUW71 , BUW72 , BUW73 , BUW74 , 100DA025D , BUW76 , BUW77 , BUW81 , BUW81A , BUW84 , BUW85 , BUW86 , BUW87 .

History: TIPL757A | BDT55 | HBDM60V600W | 2SC1539 | BFS39 | KD3055

Keywords - BUW75 transistor datasheet

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