All Transistors. BUW84 Datasheet

 

BUW84 Datasheet and Replacement


   Type Designator: BUW84
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO126
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BUW84 Datasheet (PDF)

 ..1. Size:76K  philips
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BUW84

DISCRETE SEMICONDUCTORSDATA SHEETBUW84; BUW85Silicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW84; BUW85DESCRIPTION PINNINGHigh-voltage, high-speed,PIN DESCRIPTIONglass-passivated NPN power1 baset

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BD354 | BD536J | NTE244 | MRF492 | MUN2135T1G | 2SB1064 | CMST5087

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