BUW84 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW84
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO126
BUW84 Transistor Equivalent Substitute - Cross-Reference Search
BUW84 Datasheet (PDF)
..1. Size:76K philips
buw84 1.pdf
buw84 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUW84; BUW85Silicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW84; BUW85DESCRIPTION PINNINGHigh-voltage, high-speed,PIN DESCRIPTIONglass-passivated NPN power1 baset
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
