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BUW84 Specs and Replacement


   Type Designator: BUW84
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO126
 

 BUW84 Substitution

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BUW84 datasheet

 ..1. Size:76K  philips
 buw84 1.pdf pdf_icon

BUW84

DISCRETE SEMICONDUCTORS DATA SHEET BUW84; BUW85 Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW84; BUW85 DESCRIPTION PINNING High-voltage, high-speed, PIN DESCRIPTION glass-passivated NPN power 1 base t... See More ⇒

Detailed specifications: BUW72 , BUW73 , BUW74 , BUW75 , BUW76 , BUW77 , BUW81 , BUW81A , 2SC2073 , BUW85 , BUW86 , BUW87 , BUW87A , BUW88 , BUW89 , BUW91 , BUW92 .

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