BUX25-TO258 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX25-TO258
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO258
BUX25-TO258 Transistor Equivalent Substitute - Cross-Reference Search
BUX25-TO258 Datasheet (PDF)
bux25s.pdf
BUX25SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25)26.67 (1.05) 9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 23(case)3.84 (0.151)4.09 (0.161) 7.92 (0.312)12.70 (0.50)TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max
bux25.pdf
isc Silicon NPN Power Transistor BUX25DESCRIPTIONLow Collector Saturation Voltage-High Switching SpeedHigh Current Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and industrial equipment.Absolute maximum ratings(Ta=25)SYMBOL PARAMETE
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
