BUX30AVB Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX30AVB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO3
BUX30AVB Transistor Equivalent Substitute - Cross-Reference Search
BUX30AVB Datasheet (PDF)
9.1. Size:205K inchange semiconductor
bux30.pdf
bux30.pdf
isc Silicon NPN Darlington Power Transistor BUX30DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High ReliabilityDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for automotive ignition applications and invertercircuits for motor control.ABSOLUTE MAXIMUM
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: MP2143
