All Transistors. BUX30AVB Datasheet

 

BUX30AVB Datasheet and Replacement


   Type Designator: BUX30AVB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO3
 

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BUX30AVB Datasheet (PDF)

 9.1. Size:205K  inchange semiconductor
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BUX30AVB

isc Silicon NPN Darlington Power Transistor BUX30DESCRIPTIONCollector-Emitter Sustaining Voltage-V = 400V(Min)CEO(SUS)High ReliabilityDARLINGTON100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for automotive ignition applications and invertercircuits for motor control.ABSOLUTE MAXIMUM

Datasheet: BUX25-TO258 , BUX26 , BUX27 , BUX28 , BUX28V , BUX29 , BUX30 , BUX30AVA , 2SC5198 , BUX30AVC , BUX31 , BUX31A , BUX31B , BUX32 , BUX32A , BUX32B , BUX33 .

History: 2SC3938

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