BUX31B Datasheet. Specs and Replacement
Type Designator: BUX31B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
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BUX31B datasheet
isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min)-BUX31 CEO(SUS) = 450V (Min)-BUX31A = 500V (Min)-BUX31B Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies and are also well suited for u... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUX31 = 450V (Min)-BUX31A = 450V (Min)-BUX31B Low Saturation Voltage APPLICATIONS Designed for off-line power supplies and are also well suited for use in a wide range of invert... See More ⇒
Detailed specifications: BUX28V, BUX29, BUX30, BUX30AVA, BUX30AVB, BUX30AVC, BUX31, BUX31A, B647, BUX32, BUX32A, BUX32B, BUX33, BUX33A, BUX33B, BUX34, BUX348
Keywords - BUX31B pdf specs
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