BUX45 Specs and Replacement
Type Designator: BUX45
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BUX45 Substitution
- BJT ⓘ Cross-Reference Search
BUX45 datasheet
isc Silicon NPN Power Transistor BUX45 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.) @ I = 1A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high voltage, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
SILICON NPN POWER SWITCHING TRANSISTOR BUX45X High Voltage, High Power, Fast Switching. Hermetic Metal TO3 Package. Ideally suited for Motor Control and Power Switching Circuits Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 500V VCEX Collector Emitter Voltage VBE = -1.5V 500V ... See More ⇒
Detailed specifications: BUX41, BUX41A, BUX41B, BUX41N, BUX42, BUX42A, BUX43, BUX44, D882, BUX46, BUX46A, BUX46B, BUX47, BUX47A, BUX47B, BUX48, BUX48A
Keywords - BUX45 pdf specs
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