BUX67D Specs and Replacement

Type Designator: BUX67D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO66

 BUX67D Substitution

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BUX67D datasheet

 9.1. Size:158K  inchange semiconductor

 bux67 a b c.pdf pdf_icon

BUX67D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX67/A/B/C DESCRIPTION Contunuous Collector Current-IC= 2A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- VCE(sat)= 2.5V(Max)@ IC = 1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s... See More ⇒

 9.2. Size:207K  inchange semiconductor

 bux67 bux67a bux67b bux67c.pdf pdf_icon

BUX67D

isc Silicon NPN Power Transistors BUX67/A/B/C DESCRIPTION Contunuous Collector Current-I = 2A C Power Dissipation-P =35W @T = 25 D C Collector-Emitter Saturation Voltage- V )= 2.5V(Max)@ I = 1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation f... See More ⇒

Detailed specifications: BUX66, BUX66A, BUX66B, BUX66C, BUX67, BUX67A, BUX67B, BUX67C, S9013, BUX69, BUX70, BUX71, BUX72, BUX73, BUX74, BUX75, BUX76

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