BUX81-9 Specs and Replacement

Type Designator: BUX81-9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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BUX81-9 datasheet

 9.1. Size:203K  inchange semiconductor

 bux81.pdf pdf_icon

BUX81-9

isc Silicon NPN Power Transistors BUX81 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching-mode power supplies, CRT scanning, Inverters, and other industrial applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

Detailed specifications: BUX78, BUX78SM, BUX80, BUX80-4, BUX80-5, BUX80-6, BUX80-7, BUX81, 2N2907, BUX82, BUX82-4, BUX82-5, BUX82-6, BUX82-7, BUX83, BUX83-9, BUX84

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