All Transistors. BUX86P Datasheet

 

BUX86P Datasheet and Replacement


   Type Designator: BUX86P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 42 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 26
   Noise Figure, dB: -
   Package: TO126
 

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BUX86P Datasheet (PDF)

 ..1. Size:41K  philips
 bux86p 87p 1.pdf pdf_icon

BUX86P

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTIONHigh voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITBUX 86P 87

 9.1. Size:107K  siemens
 bux86 bux87.pdf pdf_icon

BUX86P

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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