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BUX86P PDF Specs and Replacement


   Type Designator: BUX86P
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 42 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 26
   Noise Figure, dB: -
   Package: TO126
 

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BUX86P PDF detailed specifications

 ..1. Size:41K  philips
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BUX86P

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87... See More ⇒

 9.1. Size:107K  siemens
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BUX86P

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Detailed specifications: BUX84F , BUX85 , BUX85F , BUX86 , BUX86-4 , BUX86-5 , BUX86-6 , BUX86-7 , TIP41C , BUX87 , BUX87-9 , BUX87P , BUX88 , BUX90 , BUX91 , BUX92 , BUX93 .

History: BUX95 | BUX87P

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