BUY12T Specs and Replacement

Type Designator: BUY12T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

 BUY12T Substitution

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BUY12T datasheet

 9.1. Size:201K  inchange semiconductor

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BUY12T

isc Silicon NPN Power Transistor BUY12 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min.) (BR)CEO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 210 V CB... See More ⇒

Detailed specifications: BUX98P, BUX98PI, BUXD87-1, BUXD87T4, BUY10, BUY11, BUY12, BUY12S, 2SD1047, BUY13, BUY13S, BUY14, BUY16, BUY17, BUY18, BUY18S, BUY19

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