All Transistors. BUY55-10 Datasheet

 

BUY55-10 Datasheet and Replacement


   Type Designator: BUY55-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO3
 
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BUY55-10 Datasheet (PDF)

 9.1. Size:202K  inchange semiconductor
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BUY55-10

isc Silicon NPN Power Transistor BUY55DESCRIPTION Collector-Emitter Breakdown Voltage-: V = 125V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general switching applications at higher outputs.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

Keywords - BUY55-10 transistor datasheet

 BUY55-10 cross reference
 BUY55-10 equivalent finder
 BUY55-10 lookup
 BUY55-10 substitution
 BUY55-10 replacement

 

 
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