BUY55-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUY55-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO3
BUY55-10 Transistor Equivalent Substitute - Cross-Reference Search
BUY55-10 Datasheet (PDF)
9.1. Size:202K inchange semiconductor
buy55.pdf
buy55.pdf
isc Silicon NPN Power Transistor BUY55DESCRIPTION Collector-Emitter Breakdown Voltage-: V = 125V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general switching applications at higher outputs.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
