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BUY55-10 Specs and Replacement


   Type Designator: BUY55-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO3

 BUY55-10 Transistor Equivalent Substitute - Cross-Reference Search

   

BUY55-10 detailed specifications

 9.1. Size:202K  inchange semiconductor
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BUY55-10

isc Silicon NPN Power Transistor BUY55 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 125V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.5V@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: BUY51A , BUY52 , BUY52A , BUY53 , BUY53A , BUY54 , BUY54A , BUY55 , B647 , BUY55-4 , BUY55-6 , BUY56 , BUY56-10 , BUY56-4 , BUY56-6 , BUY57 , BUY58 .

Keywords - BUY55-10 transistor specs

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