BUY58 Specs and Replacement

Type Designator: BUY58

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUY58 datasheet

 ..1. Size:202K  inchange semiconductor

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BUY58

isc Silicon NPN Power Transistor BUY58 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 1.3V@ I = 10A CE(sat) C APPLICATIONS Designed for general switching applications at higher outputs. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter Vo... See More ⇒

Detailed specifications: BUY55-10, BUY55-4, BUY55-6, BUY56, BUY56-10, BUY56-4, BUY56-6, BUY57, TIP41C, BUY59, BUY60, BUY61, BUY62, BUY63, BUY64, BUY65, BUY66

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