All Transistors. C1001 Datasheet

 

C1001 Datasheet and Replacement


   Type Designator: C1001
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO61
 

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C1001 Datasheet (PDF)

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C1001

INC1001AC1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini package for easy mounting High collector current(IC=500mA) Low coll

Datasheet: BVW90 , BVX18A , C055 , C055P , C066 , C066P , C1 , C100 , 8550 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 , C112 .

History: C055P | BSX64SMD05 | 2SD476AK | 2SA1417S-TD-E | HPA100R-3 | 2SC1270 | 2SC307

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