C1001 Transistor. Datasheet pdf. Equivalent
Type Designator: C1001
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO61
C1001 Transistor Equivalent Substitute - Cross-Reference Search
C1001 Datasheet (PDF)
1.1. inc1001ac1.pdf 
Size:119K _isahaya
INC1001AC1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini package for easy mounting ・High collector current(IC=500mA) ② ③ ・Low coll
Datasheet: BVW90 , BVX18A , C055 , C055P , C066 , C066P , C1 , C100 , TIP41 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 , C112 .
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