All Transistors. C1001 Datasheet

 

C1001 Transistor. Datasheet pdf. Equivalent

Type Designator: C1001

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO61

C1001 Transistor Equivalent Substitute - Cross-Reference Search

C1001 Datasheet (PDF)

1.1. inc1001ac1.pdf Size:119K _isahaya

C1001
C1001

INC1001AC1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT:mm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini package for easy mounting ・High collector current(IC=500mA) ② ③ ・Low coll

Datasheet: BVW90 , BVX18A , C055 , C055P , C066 , C066P , C1 , C100 , TIP41 , C1002 , C1003 , C1004 , C101 , C102 , C103 , C106 , C112 .

 


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