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C169 Specs and Replacement


   Type Designator: C169
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Emitter Voltage |Vce|: 9 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO92
 

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C169 datasheet

 0.1. Size:151K  cdil
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C169

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application. ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BC167 BC168 BC169 UNITS VCEO Collec... See More ⇒

Detailed specifications: C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P , C168 , 2N2907 , C2 , C25-12 , C25-28 , C266 , C266P , C2-8 , C2-8Z , C3-12 .

History: C25-28 | BUY13S

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