All Transistors. C169 Datasheet

 

C169 Datasheet, Equivalent, Cross Reference Search


   Type Designator: C169
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Emitter Voltage |Vce|: 9 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO92

 C169 Transistor Equivalent Substitute - Cross-Reference Search

   

C169 Datasheet (PDF)

 0.1. Size:151K  cdil
bc167ab bc168abc bc169.pdf

C169
C169

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167BBC168A, BC168B, BC168CBC169B, BC169CTO-92Plastic PackageAF Pre and Driver Stages as well as for Universal Application.ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC167 BC168 BC169 UNITSVCEOCollec

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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