C169 Datasheet and Replacement
Type Designator: C169
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Emitter Voltage |Vce|: 9 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO92
C169 Substitution
C169 Datasheet (PDF)
bc167ab bc168abc bc169.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167BBC168A, BC168B, BC168CBC169B, BC169CTO-92Plastic PackageAF Pre and Driver Stages as well as for Universal Application.ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC167 BC168 BC169 UNITSVCEOCollec
bc107 bc108 bc109 bc167 bc168 bc169 bc237 bc238 bc239 bc317 bc318 bc319.pdf

Datasheet: C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P , C168 , 2SC2482 , C2 , C25-12 , C25-28 , C266 , C266P , C2-8 , C2-8Z , C3-12 .
History: 2SA1787 | TTC016 | NSBC123TDP6T5G | GC522 | CSB744AO | 2SD2643 | HEPS9149
Keywords - C169 transistor datasheet
C169 cross reference
C169 equivalent finder
C169 lookup
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History: 2SA1787 | TTC016 | NSBC123TDP6T5G | GC522 | CSB744AO | 2SD2643 | HEPS9149



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