CBCP69 Datasheet. Specs and Replacement

Type Designator: CBCP69  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Forward Current Transfer Ratio (hFE), MIN: 85

Noise Figure, dB: -

Package: SOT223

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CBCP69 datasheet

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CBCP69

CBCP68 NPN CBCP69 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY DESCRIPTION SMALL SIGNAL SILICON The CENTRAL SEMICONDUCTOR CBCP68 and TRANSISTORS CBCP69 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. MARKING FULL PART NUMBER S... See More ⇒

Detailed specifications: CA3082F, CA3082M, CA3250E, CA3250F, CA3251E, CA3251F, CB1F4, CBCP68, 2N2907, CBCX68, CBCX69, CBSL30, CC6168F, CC6168G, CC6225, CC6225F, CC62266

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