All Transistors. CD15000E Datasheet

 

CD15000E Datasheet and Replacement


   Type Designator: CD15000E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO39
 

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CD15000E Datasheet (PDF)

 9.1. Size:26K  shaanxi
 3cd150.pdf pdf_icon

CD15000E

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC

Datasheet: CCS2008GF , CCS2053 , CCS2053EFG , CD0014N , CD0014NA , CD0014NG , CD15000C , CD15000D , 13007 , CD1602 , CD1802 , CD1803 , CD1899 , CD1979 , CD1984 , CD1985 , CD2035 .

History: 2SC4163M | 2SC2956 | 2SC382 | BC328 | CHIMD8GP | BC332 | 849CT

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