CD15000E Datasheet, Equivalent, Cross Reference Search
Type Designator: CD15000E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO39
CD15000E Transistor Equivalent Substitute - Cross-Reference Search
CD15000E Datasheet (PDF)
9.1. Size:26K shaanxi
3cd150.pdf
3cd150.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150PNP Silicon Low Frequency High Power Transistor Features: 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class: JP, JT, JC
Datasheet: CCS2008GF , CCS2053 , CCS2053EFG , CD0014N , CD0014NA , CD0014NG , CD15000C , CD15000D , TSB145 , CD1602 , CD1802 , CD1803 , CD1899 , CD1979 , CD1984 , CD1985 , CD2035 .
History: BDY58
