CD15000E Datasheet. Specs and Replacement
Type Designator: CD15000E 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO39
CD15000E Substitution
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CD15000E datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3CD150 PNP Silicon Low Frequency High Power Transistor Features 1. Heavy output current.Small saturation voltage drop. Good temperature stability. 2. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611. 3. Use for power amplify, Low-speed switch, power adjustment. 4. Quality Class JP, JT, JC... See More ⇒
Detailed specifications: CCS2008GF, CCS2053, CCS2053EFG, CD0014N, CD0014NA, CD0014NG, CD15000C, CD15000D, C5198, CD1602, CD1802, CD1803, CD1899, CD1979, CD1984, CD1985, CD2035
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