CDQ10032 Datasheet. Specs and Replacement
Type Designator: CDQ10032 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.385 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO5
CDQ10032 Substitution
- BJT ⓘ Cross-Reference Search
CDQ10032 datasheet
NO PDF data!
Detailed specifications: CDQ10020, CDQ10021, CDQ10022, CDQ10023, CDQ10024, CDQ10025, CDQ10026, CDQ10027, TIP41C, CDQ10033, CDQ10034, CDQ10035, CDQ10036, CDQ10037, CDQ10044, CDQ10045, CDQ10046
Keywords - CDQ10032 pdf specs
CDQ10032 cross reference
CDQ10032 equivalent finder
CDQ10032 pdf lookup
CDQ10032 substitution
CDQ10032 replacement
