CI1 Datasheet, Equivalent, Cross Reference Search
Type Designator: CI1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 3 MHz
Noise Figure, dB: -
Package: TO72
CI1 Transistor Equivalent Substitute - Cross-Reference Search
CI1 Datasheet (PDF)
fci11n60.pdf
December 2008 TMSuperFETFCI11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 40nC) lower gate charge performance.
ci15t60.pdf
CI15T6015A600V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-220AB Short collector time-5us. High current capability.0.420(10.66)0.197(5.0)MAX High input impedance.0.386(9.80)0.055(1.40) Low saturation voltage : VCE(sat) = 1.65@25OC.0.043(1.10) Fast switching : 20KHz ~ 40KHz(Ta = 25OC)
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
