All Transistors. CI1 Datasheet

 

CI1 Datasheet, Equivalent, Cross Reference Search

Type Designator: CI1

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 3 MHz

Noise Figure, dB: -

Package: TO72

CI1 Transistor Equivalent Substitute - Cross-Reference Search

 

CI1 Datasheet (PDF)

0.1. fci11n60.pdf Size:899K _fairchild_semi

CI1
CI1

December 2008 TMSuperFETFCI11N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Ultra Low Gate Charge (typ. Qg = 40nC) lower gate charge performance.

0.2. ci15t60.pdf Size:476K _citcorp

CI1
CI1

CI15T6015A600V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-220AB Short collector time-5us. High current capability.0.420(10.66)0.197(5.0)MAX High input impedance.0.386(9.80)0.055(1.40) Low saturation voltage : VCE(sat) = 1.65@25OC.0.043(1.10) Fast switching : 20KHz ~ 40KHz(Ta = 25OC)

 

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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