CJD200 Datasheet, Equivalent, Cross Reference Search
Type Designator: CJD200
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: DPAK
CJD200 Transistor Equivalent Substitute - Cross-Reference Search
CJD200 Datasheet (PDF)
cjd200-cjd210.pdf
CJD200 NPNCJD210 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICONThe CENTRAL SEMICONDUCTOR CJD200, CJD210 POWER TRANSISTORStypes are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications.MARKING: FULL PART NUMBERDPAK TRANSISTOR CASEMAXIMUM RATINGS: (TC=25C unless otherwise
cjd204r.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON POWER TRANSISTOR CJD204RPin Configurations:-TO-251Pin 1 :- EmitterI PAK Plastic PackagePin 2 :- Collector Pin 3 :- BaseABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 60 VVEBOEmitter Base Voltage 5
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
