All Transistors. CJD200 Datasheet

 

CJD200 Datasheet and Replacement


   Type Designator: CJD200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 65 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: DPAK
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CJD200 Datasheet (PDF)

 0.1. Size:419K  central
 cjd200-cjd210.pdf pdf_icon

CJD200

CJD200 NPNCJD210 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICONThe CENTRAL SEMICONDUCTOR CJD200, CJD210 POWER TRANSISTORStypes are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications.MARKING: FULL PART NUMBERDPAK TRANSISTOR CASEMAXIMUM RATINGS: (TC=25C unless otherwise

 9.1. Size:193K  cdil
 cjd204r.pdf pdf_icon

CJD200

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON POWER TRANSISTOR CJD204RPin Configurations:-TO-251Pin 1 :- EmitterI PAK Plastic PackagePin 2 :- Collector Pin 3 :- BaseABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 60 VVEBOEmitter Base Voltage 5

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD734G | KTD1302 | S8050DAF-C | CM4209 | MMS8550 | HJ10387 | UN9110S

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