CJD200 Specs and Replacement

Type Designator: CJD200

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: DPAK

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CJD200 datasheet

 0.1. Size:419K  central

 cjd200-cjd210.pdf pdf_icon

CJD200

CJD200 NPN CJD210 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CJD200, CJD210 POWER TRANSISTORS types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS (TC=25 C unless otherwise ... See More ⇒

 9.1. Size:193K  cdil

 cjd204r.pdf pdf_icon

CJD200

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER TRANSISTOR CJD204R Pin Configurations - TO-251 Pin 1 - Emitter I PAK Plastic Package Pin 2 - Collector Pin 3 - Base ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 60 V VEBO Emitter Base Voltage 5... See More ⇒

Detailed specifications: CIL931, CIL932, CIL997, CJD112, CJD117, CJD122, CJD127, CJD13003, NJW0281G, CJD210, CJD2955, CJD3055, CJD31C, CJD32C, CJD340, CJD350, CJD41C

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