2N339 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N339
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.06 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
2N339 Transistor Equivalent Substitute - Cross-Reference Search
2N339 Datasheet (PDF)
2n3390 2n3391 2n3391a 2n3392 2n3393.pdf
Discrete POWER & SignalTechnologies2N33902N33912N3391A2N33922N3393B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO
mps3393 2n3393 mps3394 2n3394 mps3395 2n3395 mps3396 2n3396 mps3397 2n3397 mps3398 2n3398 mps6565 mps6566 mps6575 mps6576.pdf
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .