2N3390 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N3390
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 18 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO92

2N3390 Transistor Equivalent Substitute - Cross-Reference Search

2N3390 Datasheet (PDF)

..1. Size:296K fairchild semi
2n3390 2n3391 2n3391a 2n3392 2n3393.pdf

Discrete POWER & SignalTechnologies2N33902N33912N3391A2N33922N3393B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO

..2. Size:61K microelectronics
mps2711 2n2711 mps2712 2n2712 mps2716 2n2716 mps2923 2n2923 mps2924 2n2924 mps2925 2n2925 mps3390 2n3390 mps3391 2n3391 mps3392 2n3392 mps6573 mps6574.pdf