All Transistors. CMPTH10 Datasheet

 

CMPTH10 Datasheet and Replacement


   Type Designator: CMPTH10
   SMD Transistor Code: C3E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.004 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 650 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23
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CMPTH10 Datasheet (PDF)

 ..1. Size:322K  central
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CMPTH10

CMPTH10www.centralsemi.comSURFACE MOUNTNPN SILICON DESCRIPTION:RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications.MARKING CODE: C3ESOT-23 CASEMAXIMUM RATINGS: (TA=25C)

 9.1. Size:331K  central
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CMPTH10

CMPTH81www.centralsemi.comSURFACE MOUNTPNP SILICON DESCRIPTION:RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.MARKING CODE: C3D or 3DSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage V

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1420 | 2SA204 | KSC2258O | RN2972CT | 2N1592 | PMBT3904 | C12-28

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