CMPTH10 Datasheet, Equivalent, Cross Reference Search
Type Designator: CMPTH10
SMD Transistor Code: C3E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.004 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 650 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT23
CMPTH10 Transistor Equivalent Substitute - Cross-Reference Search
CMPTH10 Datasheet (PDF)
cmpth10.pdf
CMPTH10www.centralsemi.comSURFACE MOUNTNPN SILICON DESCRIPTION:RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications.MARKING CODE: C3ESOT-23 CASEMAXIMUM RATINGS: (TA=25C)
cmpth81.pdf
CMPTH81www.centralsemi.comSURFACE MOUNTPNP SILICON DESCRIPTION:RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.MARKING CODE: C3D or 3DSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
