D40N2 Specs and Replacement

Type Designator: D40N2

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 6.5 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO202

 D40N2 Substitution

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D40N2 datasheet

 0.1. Size:917K  st

 std40n2lh5 stu40n2lh5.pdf pdf_icon

D40N2

STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 , 40 A, DPAK, IPAK STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD40N2LH5 25 V 0.0118 40 A STU40N2LH5 25 V 0.0124 40 A 3 3 2 RDS(on) * Qg industry benchmark 1 1 Extremely low on-resistance RDS(on) DPAK IPAK Very low switching gate charge High avalanche ruggedness Low gate drive power l... See More ⇒

 0.2. Size:1084K  cn minos

 md40n25.pdf pdf_icon

D40N2

Silicon N-Channel Power MOSFET Description MD40N25 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =250V, R ... See More ⇒

Detailed specifications: D40E5-6, D40E6, D40E7, D40K1, D40K2, D40K3, D40K4, D40N1, TIP2955, D40N3, D40N4, D40N5, D40NU1, D40NU2, D40NU3, D40NU4, D40NU5

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