D40N2 Datasheet, Equivalent, Cross Reference Search
Type Designator: D40N2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 6.5 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO202
D40N2 Transistor Equivalent Substitute - Cross-Reference Search
D40N2 Datasheet (PDF)
0.1. Size:917K st
std40n2lh5 stu40n2lh5.pdf
std40n2lh5 stu40n2lh5.pdf
STD40N2LH5STU40N2LH5N-channel 25 V, 0.01 , 40 A, DPAK, IPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD40N2LH5 25 V 0.0118 40 A STU40N2LH5 25 V 0.0124 40 A332 RDS(on) * Qg industry benchmark11 Extremely low on-resistance RDS(on)DPAKIPAK Very low switching gate charge High avalanche ruggedness Low gate drive power l
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
