D40P1 Specs and Replacement
Type Designator: D40P1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 6.25 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO202
D40P1 Substitution
- BJT ⓘ Cross-Reference Search
D40P1 datasheet
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WSD40P10DN56 P-Ch MOSFET General Description Product Summery The WSD40P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 78m -30A excellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD40P10DN56 meet the RoHS and High Frequency Point-of-Load Sy... See More ⇒
Detailed specifications: D40N3, D40N4, D40N5, D40NU1, D40NU2, D40NU3, D40NU4, D40NU5, TIP142, D40P2, D40P3, D40P4, D40P5, D40PU1, D40PU2, D40PU3, D40PU4
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