DT1003 Datasheet. Specs and Replacement
Type Designator: DT1003
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 36
Package: TO5
DT1003 Substitution
- BJT ⓘ Cross-Reference Search
DT1003 datasheet
mpg100n06 mdt100n06 mps100n06.pdf 
Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R ... See More ⇒
Detailed specifications: DPT124, DPT2600, DQN1006, DR42R2-126, DR42R2-220, DT100-1000, DT100-1100, DT100-1200, TIP41, DT100-800, DT100-900, DT1110, DT1111, DT1112, DT1120, DT1121, DT1122
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