2N3500S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3500S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO31
2N3500S Transistor Equivalent Substitute - Cross-Reference Search
2N3500S Datasheet (PDF)
2n3500-2n3501.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3498 99 2n3500 01.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS2N3499 2N3501VCEOCollector Emitter Voltage 100 150 VVCBOCollector Base Voltage 100
2n3500l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
