All Transistors. DTB114ES Datasheet

 

DTB114ES Datasheet and Replacement


   Type Designator: DTB114ES
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: SC72
 

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DTB114ES Datasheet (PDF)

 ..1. Size:61K  rohm
dtb114ek dtb114es.pdf pdf_icon

DTB114ES

TransistorsDigital transistors (built-in resistors)DTB114EK / DTB114ESFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive biasing of theinput. They

 7.1. Size:26K  motorola
pdtb114et p09 sot23.pdf pdf_icon

DTB114ES

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi

 7.2. Size:49K  motorola
pdtb114et 4.pdf pdf_icon

DTB114ES

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi

 7.3. Size:49K  philips
pdtb114et 4.pdf pdf_icon

DTB114ES

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi

Datasheet: DTA144VUA , DTC115TS3 , DTA144WKA , DTA144WSA , DTA144WUA , DTB113EK , DTB113ES , DTB114EK , 2N3904 , DTB123EK , DTB123ES , DTB143EC , DTB143EK , DTB143ES , DTC113ZKA , DTC113ZSA , DTC113ZUA .

History: BFT83 | MP4917 | TMPC1009F4 | 2SB351A | CST1745 | 2SC2258O | 2SD668

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