DTB114ES Datasheet. Specs and Replacement

Type Designator: DTB114ES

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: SC72

 DTB114ES Substitution

- BJT ⓘ Cross-Reference Search

 

DTB114ES datasheet

 ..1. Size:61K  rohm

dtb114ek dtb114es.pdf pdf_icon

DTB114ES

Transistors Digital transistors (built-in resistors) DTB114EK / DTB114ES FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive biasing of the input. They ... See More ⇒

 7.1. Size:26K  motorola

pdtb114et p09 sot23.pdf pdf_icon

DTB114ES

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒

 7.2. Size:49K  motorola

pdtb114et 4.pdf pdf_icon

DTB114ES

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒

 7.3. Size:49K  philips

pdtb114et 4.pdf pdf_icon

DTB114ES

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒

Detailed specifications: DTA144VUA, DTC115TS3, DTA144WKA, DTA144WSA, DTA144WUA, DTB113EK, DTB113ES, DTB114EK, BC548, DTB123EK, DTB123ES, DTB143EC, DTB143EK, DTB143ES, DTC113ZKA, DTC113ZSA, DTC113ZUA

Keywords - DTB114ES pdf specs

 DTB114ES cross reference

 DTB114ES equivalent finder

 DTB114ES pdf lookup

 DTB114ES substitution

 DTB114ES replacement