EMB75 Datasheet. Specs and Replacement
Type Designator: EMB75
SMD Transistor Code: B75
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC-107C
EMB75 Substitution
- BJT ⓘ Cross-Reference Search
EMB75 datasheet
EMB75 Datasheet Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter DTr1 and DTr2 EMT6 VCC -50V IC(MAX.) -100mA R1 4.7k EMB75 R2 (SC-107C) 47k lFeatures lInner circuit l l 1) Two DTA043Z chips in a EMT6 package. 2) Transister elements are independent, eliminati... See More ⇒
Detailed specifications: DTC143XKA, DTC143XSA, DTC143ZCA, EMC2DXV5, DTC143ZKA, DTC143ZSA, DTC143ZUA, DTC144ECA, BD222, DTC144EKA, DTC144EUA, EMB6FHA, DTC144GKA, DTC144GSA, DTC144GUA, EMB61, DTC144TKA
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