All Transistors. EMB3FHA Datasheet

 

EMB3FHA Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMB3FHA
   SMD Transistor Code: B3
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-107C

 EMB3FHA Transistor Equivalent Substitute - Cross-Reference Search

   

EMB3FHA Datasheet (PDF)

 ..1. Size:1266K  rohm
emb3fha umb3nfha imb3afra.pdf

EMB3FHA
EMB3FHA

EMB3FHA / UMB3NFHA / IMB3AFRAEMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N EMB3FHA UMB3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)

 ..2. Size:1266K  rohm
emb3fha.pdf

EMB3FHA
EMB3FHA

EMB3FHA / UMB3NFHA / IMB3AFRAEMB3 / UMB3N / IMB3ADatasheetPNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) (5) VCEO-50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R14.7kWEMB3 UMB3N EMB3FHA UMB3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2S003 | FJN3315R

 

 
Back to Top