DTS660 Datasheet and Replacement

   Type Designator: DTS660
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 2.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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