DTS660 Datasheet, Equivalent, Cross Reference Search
Type Designator: DTS660
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .