All Transistors. E20079 Datasheet

 

E20079 Datasheet and Replacement


   Type Designator: E20079
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 52 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1600 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 20209
 

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E20079 Datasheet (PDF)

 9.1. Size:344K  ncepower
nce2007n.pdf pdf_icon

E20079

Pb Free Producthttp://www.ncepower.com NCE2007NSNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Ge

 9.2. Size:322K  ncepower
nce2007ns.pdf pdf_icon

E20079

http://www.ncepower.com NCE2007NSNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007NS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 6.5A

 9.3. Size:618K  cn sino-ic
se20075.pdf pdf_icon

E20079

SE20075N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V = 200VDSoperation voltage. This device is suitable for R =15.8m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: E1B | CD13001 | BCX41R | 2N674 | BUV66 | BC109AP | 2N1662

Keywords - E20079 transistor datasheet

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