E20079 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: E20079
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 52 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1.4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1600 MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: 20209
Búsqueda de reemplazo de E20079
E20079 datasheet
nce2007n.pdf
Pb Free Product http //www.ncepower.com NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Ge
nce2007ns.pdf
http //www.ncepower.com NCE2007NS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007NS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 6.5A
se20075.pdf
SE20075 N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V = 200V DS operation voltage. This device is suitable for R =15.8m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline
Otros transistores... DW7975 , DZ9A4 , DZ9A5 , E10-28 , E1-28 , E1617 , E1694 , E1B , A1941 , E20080 , E20124 , E20155 , E20158 , E20180 , E20182 , E20188 , E20190 .
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