E20080 Datasheet, Equivalent, Cross Reference Search
Type Designator: E20080
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 123 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1600 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: 20209
E20080 Transistor Equivalent Substitute - Cross-Reference Search
E20080 Datasheet (PDF)
nce2008e.pdf
Pb Free Producthttp://www.ncepower.com NCE2008ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features
nce2008n.pdf
http://www.ncepower.com NCE2008NSNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE2008N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
