E20080 Datasheet. Specs and Replacement

Type Designator: E20080  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 123 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3.4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1600 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20209

 E20080 Substitution

- BJT ⓘ Cross-Reference Search

 

E20080 datasheet

 9.1. Size:346K  ncepower

 nce2008e.pdf pdf_icon

E20080

Pb Free Product http //www.ncepower.com NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

 9.2. Size:287K  ncepower

 nce2008n.pdf pdf_icon

E20080

... See More ⇒

Detailed specifications: DZ9A4, DZ9A5, E10-28, E1-28, E1617, E1694, E1B, E20079, TIP31C, E20124, E20155, E20158, E20180, E20182, E20188, E20190, E20192

Keywords - E20080 pdf specs

 E20080 cross reference

 E20080 equivalent finder

 E20080 pdf lookup

 E20080 substitution

 E20080 replacement