All Transistors. E20080 Datasheet

 

E20080 Datasheet and Replacement


   Type Designator: E20080
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 123 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1600 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 20209
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E20080 Datasheet (PDF)

 9.1. Size:346K  ncepower
 nce2008e.pdf pdf_icon

E20080

Pb Free Producthttp://www.ncepower.com NCE2008ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 9.2. Size:287K  ncepower
 nce2008n.pdf pdf_icon

E20080

http://www.ncepower.com NCE2008NSNCE N-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The NCE2008N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DTA143Z | D41D2 | BC253 | BC419B | MQ3566 | 2SC529A | DMMT2907A

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