E20124 Datasheet. Specs and Replacement

Type Designator: E20124  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 130 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 7.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1400 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: 20209

 E20124 Substitution

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E20124 datasheet

 0.1. Size:252K  ericsson

 pte20124.pdf pdf_icon

E20124

e PTE 20124* 40 Watts, 1.465 1.513 GHz Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended 40 Watts, 1.465 1.513 GHz for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 Class AB Characteristics watts minimum output power, it is specifically intended for cellular Gold Metallization and DAB power app... See More ⇒

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 nce2012.pdf pdf_icon

E20124

Pb Free Product http //www.ncepower.com NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: DZ9A5, E10-28, E1-28, E1617, E1694, E1B, E20079, E20080, 2N2222A, E20155, E20158, E20180, E20182, E20188, E20190, E20192, E20231

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