All Transistors. E20124 Datasheet

 

E20124 Datasheet and Replacement


   Type Designator: E20124
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 130 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 7.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1400 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: 20209
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E20124 Datasheet (PDF)

 0.1. Size:252K  ericsson
 pte20124.pdf pdf_icon

E20124

ePTE 20124*40 Watts, 1.4651.513 GHzCellular Radio RF Power TransistorDescriptionThe 20124 is an NPN common emitter RF power transistor intended 40 Watts, 1.4651.513 GHzfor 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 Class AB Characteristicswatts minimum output power, it is specifically intended for cellular Gold Metallizationand DAB power app

 9.1. Size:371K  ncepower
 nce2012.pdf pdf_icon

E20124

Pb Free Producthttp://www.ncepower.com NCE2012NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB744A | BDW24 | MMBT3906HE3 | BC847RA | 2N332A | 2N2874 | 2SD927

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