All Transistors. E20155 Datasheet

 

E20155 Datasheet and Replacement


   Type Designator: E20155
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 6.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 610 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: 20209
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E20155 Datasheet (PDF)

 9.1. Size:62K  philips
lwe2015r 2.pdf pdf_icon

E20155

DISCRETE SEMICONDUCTORSDATA SHEETLWE2015RNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC15Philips Semiconductors Product specificationNPN microwave power transistor LWE2015RFEATURES PINNING - SOT446A Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffus

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | BU105 | BUY46-10 | BD276 | BC859ALT1 | 2SC3459L

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