All Transistors. E20155 Datasheet

 

E20155 Datasheet and Replacement


   Type Designator: E20155
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 65 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 6.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 610 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: 20209
 

 E20155 Substitution

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E20155 Datasheet (PDF)

 9.1. Size:62K  philips
 lwe2015r 2.pdf pdf_icon

E20155

DISCRETE SEMICONDUCTORSDATA SHEETLWE2015RNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC15Philips Semiconductors Product specificationNPN microwave power transistor LWE2015RFEATURES PINNING - SOT446A Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffus

Datasheet: E10-28 , E1-28 , E1617 , E1694 , E1B , E20079 , E20080 , E20124 , 2SC2073 , E20158 , E20180 , E20182 , E20188 , E20190 , E20192 , E20231 , E20232 .

History: SRC1206UF | 2N6583 | 3DD207

Keywords - E20155 transistor datasheet

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