E20155 Datasheet and Replacement
Type Designator: E20155
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 6.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 610 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: 20209
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E20155 Datasheet (PDF)
lwe2015r 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETLWE2015RNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC15Philips Semiconductors Product specificationNPN microwave power transistor LWE2015RFEATURES PINNING - SOT446A Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffus
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: FMMT723 | 2N3322 | BU105 | BUY46-10 | BD276 | BC859ALT1 | 2SC3459L
Keywords - E20155 transistor datasheet
E20155 cross reference
E20155 equivalent finder
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History: FMMT723 | 2N3322 | BU105 | BUY46-10 | BD276 | BC859ALT1 | 2SC3459L



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