E20158 Datasheet, Equivalent, Cross Reference Search
Type Designator: E20158
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 860 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: M169
E20158 Transistor Equivalent Substitute - Cross-Reference Search
E20158 Datasheet (PDF)
9.1. Size:62K philips
lwe2015r 2.pdf
lwe2015r 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETLWE2015RNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC15Philips Semiconductors Product specificationNPN microwave power transistor LWE2015RFEATURES PINNING - SOT446A Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffus
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
