E20158 Datasheet. Specs and Replacement

Type Designator: E20158  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 860 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: M169

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E20158 datasheet

 9.1. Size:62K  philips

 lwe2015r 2.pdf pdf_icon

E20158

DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor LWE2015R FEATURES PINNING - SOT446A Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffus... See More ⇒

Detailed specifications: E1-28, E1617, E1694, E1B, E20079, E20080, E20124, E20155, 13003, E20180, E20182, E20188, E20190, E20192, E20231, E20232, E20235

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