All Transistors. E20158 Datasheet

 

E20158 Datasheet and Replacement


   Type Designator: E20158
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 860 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: M169
 

 E20158 Substitution

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E20158 Datasheet (PDF)

 9.1. Size:62K  philips
 lwe2015r 2.pdf pdf_icon

E20158

DISCRETE SEMICONDUCTORSDATA SHEETLWE2015RNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC15Philips Semiconductors Product specificationNPN microwave power transistor LWE2015RFEATURES PINNING - SOT446A Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffus

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N4432A | 2N5690 | BST50 | TRD136D | TSB1424ACW

Keywords - E20158 transistor datasheet

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