2N3552 Datasheet and Replacement
Type Designator: 2N3552
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: X21
2N3552 Datasheet (PDF)
2n3553.pdf

DISCRETE SEMICONDUCTORSDATA SHEET2N3553Silicon planar epitaxialoverlay transistor1995 Oct 27Product specificationSupersedes data of October 1981File under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationSilicon planar epitaxial2N3553overlay transistorAPPLICATIONS DESCRIPTION The 2N3553 is intended for use in VHF and UHF The device is a s
2n3558.pdf

2N3558Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = dia.IC = 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3 can b
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TT2138LS | GES5828 | MMBT5135 | FJV3113R | 2SA1606 | 2SC497R | MPS2222G
Keywords - 2N3552 transistor datasheet
2N3552 cross reference
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History: TT2138LS | GES5828 | MMBT5135 | FJV3113R | 2SA1606 | 2SC497R | MPS2222G



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