2N3553 Datasheet. Specs and Replacement
Type Designator: 2N3553 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO5
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2N3553 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor 1995 Oct 27 Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3553 overlay transistor APPLICATIONS DESCRIPTION The 2N3553 is intended for use in VHF and UHF The device is a s... See More ⇒
2N3558 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b... See More ⇒
Detailed specifications: 2N3546, 2N3547, 2N3548, 2N3549, 2N355, 2N3550, 2N3551, 2N3552, BC327, 2N3554, 2N356, 2N3563, 2N3564, 2N3565, 2N3566, 2N3567, 2N3568
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