2N357 Datasheet. Specs and Replacement

Type Designator: 2N357  📄📄 

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

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2N357 datasheet

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2N357

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2N357

2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE 500 OC/W JC NONE CHARACTER... See More ⇒

Detailed specifications: 2N3563, 2N3564, 2N3565, 2N3566, 2N3567, 2N3568, 2N3569, 2N356A, TIP35C, 2N3570, 2N3571, 2N3572, 2N3576, 2N3577, 2N3579, 2N357A, 2N358

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