All Transistors. 2N3576 Datasheet

 

2N3576 Datasheet and Replacement


   Type Designator: 2N3576
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5
 

 2N3576 Substitution

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2N3576 Datasheet (PDF)

 9.2. Size:16K  advanced-semi
2n3570.pdf pdf_icon

2N3576

2N3570NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N3570 is Designed for HighFrequency Low Noise Amplifier andOscillator Applications.PACKAGE STYLE TO- 72MAXIMUM RATINGSIC 50 mAVCB 30 VVCE 15 VVEB 3.0 VPDISS 200 mW @ TC = 25 OCTJ -65 OC to +200 OCTSTG -65 OC to +200 OC1 = EMITTER 2 = BASE3 = COLLECTOR 4 = CASE500 OC/WJCNONECHARACTER

Datasheet: 2N3567 , 2N3568 , 2N3569 , 2N356A , 2N357 , 2N3570 , 2N3571 , 2N3572 , 2SD2499 , 2N3577 , 2N3579 , 2N357A , 2N358 , 2N3580 , 2N3581 , 2N3582 , 2N3583 .

History: CHT5988ZGP

Keywords - 2N3576 transistor datasheet

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