2N3576 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3576
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N3576 Transistor Equivalent Substitute - Cross-Reference Search
2N3576 Datasheet (PDF)
9.2. Size:16K advanced-semi
2n3570.pdf
2n3570.pdf
2N3570NPN SILICON HIGH FREQUENCY TRANSISTORDESCRIPTION:The 2N3570 is Designed for HighFrequency Low Noise Amplifier andOscillator Applications.PACKAGE STYLE TO- 72MAXIMUM RATINGSIC 50 mAVCB 30 VVCE 15 VVEB 3.0 VPDISS 200 mW @ TC = 25 OCTJ -65 OC to +200 OCTSTG -65 OC to +200 OC1 = EMITTER 2 = BASE3 = COLLECTOR 4 = CASE500 OC/WJCNONECHARACTER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
